MMDFS6N303R2【PDF 2/11 页】MOSFET N-CH 30V 6A 8-SOIC

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MMDFS6N303

SCHOTTKY RECTIFIER MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)

Peak Repetitive Reverse Voltage

DC Blocking Voltage

Average Forward Current (Note 3)

(Rated V R ) T A = 104 ° C

Peak Repetitive Forward Current (Note 3)

(Rated V R , Square Wave, 20 kHz) T A = 108 ° C

Non ? Repetitive Peak Surge Current

(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)

V RRM

V R

I O

I frm

I fsm

30

2.0

4.0

30

Volts

Amps

Amps

Amps

THERMAL CHARACTERISTICS — SCHOTTKY AND MOSFET

Thermal Resistance — Junction ? to ? Ambient (Note 4) — MOSFET

Thermal Resistance — Junction ? to ? Ambient (Note 5) — MOSFET

Thermal Resistance — Junction ? to ? Ambient (Note 2) — MOSFET

Thermal Resistance — Junction ? to ? Ambient (Note 4) — Schottky

Thermal Resistance — Junction ? to ? Ambient (Note 5) — Schottky

Thermal Resistance — Junction ? to ? Ambient (Note 3) — Schottky

Operating and Storage Temperature Range

R q JA

R q JA

R q JA

R q JA

R q JA

R q JA

T j , T stg

167

97

62.5

197

97

62.5

? 55 to 150

° C/W

MOSFET ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted) (Note 6)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain ? Source Voltage

(V GS = 0 Vdc, I D = 0.25 mA)

Temperature Coefficient (Positive)

Zero Gate Drain Current

(V DS = 24 Vdc, V GS = 0 Vdc)

(V DS = 24 Vdc, V GS = 0 Vdc, T J = 125 ° C)

Gate Body Leakage Current (V GS = ± 20 Vdc, V DS = 0)

V (BR)DSS

I DSS

I GSS

30

—

—

—

—

—

—

—

—

—

—

—

1.0

20

100

Vdc

mV/ ° C

m Adc

nAdc

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

(V DS = V GS , I D = 0.25 mA)

Temperature Coefficient (Negative)

Static Drain ? Source Resistance

(V GS = 10 Vdc, I D = 5.0 Adc)

(V GS = 4.5 Vdc, I D = 3.9 Adc)

Forward Transconductance (V DS = 15 Vdc, I D = 5.0 Adc)

V GS(th)

R DS(on)

g FS

1.0

—

—

—

—

—

—

28

42

9.0

—

—

35

50

—

Vdc

m W

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(V DS = 24 Vdc, V GS = 0 Vdc,

f = 1.0 MHz)

C iss

C oss

C rss

—

—

—

430

217

67.5

600

300

135

pF

3.

4.

5.

6.

Mounted on 2 ″ square FR4 board (1 ″ sq. 2 oz. Cu 0.06 ″ thick single sided), 10 sec. max.

Mounted with minimum recommended pad size, PC Board FR4.

Mounted on 2 ″ square FR4 board (1 ″ sq. 2 oz. Cu 0.06 ″ thick single sided), Steady State.

Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%.

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